參數(shù)資料
型號： K4H511638D-LB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL
中文描述： ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費（符合RoHS）
文件頁數(shù)： 16/24頁
文件大?。?/td> 366K
代理商： K4H511638D-LB0
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Parameter
Symbol
CC
(DDR400@CL=3.0)
Min
55
70
40
15
15
10
15
2
-
6
5
0.45
0.45
-0.55
-0.65
-
0.9
0.4
0.72
0
0.25
0.2
0.2
0.35
0.35
0.6
0.6
B3
(DDR333@CL=2.5)
Min
60
72
42
18
18
12
15
1
7.5
6
-
0.45
0.45
-0.6
-0.7
-
0.9
0.4
0.75
0
0.25
0.2
0.2
0.35
0.35
0.75
0.75
A2
(DDR266@CL=2.0)
Min
65
75
45
20
20
15
15
1
7.5
7.5
-
0.45
0.45
-0.75
-0.75
-
0.9
0.4
0.75
0
0.25
0.2
0.2
0.35
0.35
0.9
0.9
B0
(DDR266@CL=2.5) Unit
Min
Max
65
75
45
70K
20
20
15
15
1
10
7.5
-
0.45
0.55
0.45
0.55
-0.75
+0.75
-0.75
+0.75
-
0.9
0.4
0.75
1.25
0
0.25
0.2
0.2
0.35
0.35
0.9
0.9
Note
Max
Max
Max
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Last data in to Read command
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWTR
ns
ns
ns
ns
ns
ns
ns
tCK
ns
ns
70K
70K
70K
Clock cycle time
CL=2.0
CL=2.5
CL=3.0
tCK
-
12
12
-
0.55
0.55
+0.6
+0.7
0.45
1.1
0.6
1.25
12
12
-
0.55
0.55
+0.75
+0.75
0.5
1.1
0.6
1.25
12
12
-
12
10
0.55
0.55
+0.55
+0.65
0.4
1.1
0.6
1.28
Clock high level width
Clock low level width
DQS-out access time from CK/CK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
DQS-in high level width
DQS-in low level width
Address and Control Input setup time(fast)
Address and Control Input hold time(fast)
Address and Control Input setup
tCH
tCL
tCK
tCK
ns
ns
ns
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
tCK
ns
ns
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tDSS
tDSH
tDQSH
tDQSL
tIS
tIH
0.5
1.1
0.6
22
13
15, 17~19
15, 17~19
tIS
0.7
0.8
1.0
1.0
ns
16~19
Address and Control Input hold time(slow)
Data-out high impedence time from CK/CK
Data-out low impedence time from CK/CK
Mode register set cycle time
DQ & DM setup time to DQS
tIH
tHZ
tLZ
tMRD
tDS
0.7
-0.65
-0.65
10
0.4
0.8
-0.7
-0.7
12
0.45
1.0
-0.75
-0.75
15
0.5
1.0
-0.75
-0.75
15
0.5
ns
ns
ns
ns
ns
ns
16~19
11
11
+0.65
+0.65
+0.7
+0.7
+0.75
+0.75
+0.75
+0.75
j, k
DQ & DM hold time to DQS
tDH
0.4
0.45
0.5
0.5
j, k
Control & Address input pulse width
DQ & DM input pulse width
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
tIPW
tDIPW
tXSNR
tXSRD
tREFI
2.2
1.75
75
200
2.2
1.75
75
200
2.2
1.75
75
200
2.2
1.75
75
200
ns
ns
ns
tCK
us
18
18
7.8
7.8
7.8
7.8
14
Output DQS valid window
tQH
tHP
-tQHS
tCLmin
or tCHmin
-
tHP
-tQHS
tCLmin
or tCHmin
-
tHP
-tQHS
tCLmin
or tCHmin
-
tHP
-tQHS
tCLmin
or tCHmin
-
ns
21
Clock half period
tHP
-
-
-
-
ns
20, 21
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
tQHS
tWPST
0.5
0.6
0.55
0.6
0.75
0.6
0.75
0.6
ns
tCK
21
12
0.4
0.4
0.4
0.4
tRAP
15
18
20
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
tCK
23
19.0 AC Timming Parameters & Specifications
相關PDF資料
PDF描述
K4H510838D-LB3 DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL
K4H511638D-LB3 DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL
K4H510838D-LCC DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL
K4H511638D-LCC DIODE ZENER SINGLE 500mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-123 3K/REEL
K4H56038D-TC 256Mb D-die DDR400 SDRAM Specification
相關代理商/技術參數(shù)
參數(shù)描述
K4H511638D-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D-LCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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