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參數(shù)資料
| 型號(hào)： | K4H511638C-ZLCC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIN Audio Connector; No. of Contacts:8; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes |
| 中文描述： | 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4H511638C-ZLCC |
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM for write masking only (x16)
DM for write masking only (x4, x8)
Auto & Self refresh
7.8us refresh interval(8K/64ms refresh)
Maximum burst refresh cycle : 8
66pin TSOP II
Pb-Free
package
RoHS compliant
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
Speed @CL2
-
133MHz
133MHz
100MHz
Speed @CL2.5
166MHz
166MHz
133MHz
133MHz
Speed @CL3
200MHz
-
-
-
CL-tRCD-tRP
3-3-3
2.5-3-3
2-3-3
2.5-3-3
Part No.
Org.
Max Freq.
Interface
Package
K4H510438C-UC/LB3
128M x 4
B3(DDR333@CL=2.5)
SSTL2
66pin TSOP II
K4H510438C-UC/LA2
A2(DDR266@CL=2)
K4H510438C-UC/LB0
B0(DDR266@CL=2.5)
K4H510838C-UC/LCC
64M x 8
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H510838C-UC/LB3
B3(DDR333@CL=2.5)
K4H510838C-UC/LA2
A2(DDR266@CL=2)
K4H510838C-UC/LB0
B0(DDR266@CL=2.5)
K4H511638C-UC/LCC
32M x 16
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H511638C-UC/LB3
B3(DDR333@CL=2.5)
K4H511638C-UC/LA2
A2(DDR266@CL=2)
K4H511638C-UC/LB0
B0(DDR266@CL=2.5)
1.0 Key Features
2.0 Ordering Information
3.0 Operating Frequencies
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510438C-ZLB3 | Connector Kit; Contents Of Kit:C14610F0240031 24 position bulkhead housing single latch spring cover, C14610B0241021 24 position female insert wire protect, With spring cover; For Use With:C146 Heavy Duty Industrial Connectors RoHS Compliant: Yes |
| K4H511638C-ZLB3 | Connector Kit; Contents Of Kit:C14610G0246008 24 position hood PG 21 double latch high profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| K4H510438C-ZCCC | 512Mb C-die DDR SDRAM Specification |
| K4H511638C-ZCCC | 512Mb C-die DDR SDRAM Specification |
| K4H510438C-ZCB3 | 512Mb C-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H511638D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| K4H511638D-LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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