參數(shù)資料
型號: K4H511638
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb C-die DDR SDRAM Specification
中文描述: 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格
文件頁數(shù): 23/24頁
文件大小: 367K
代理商: K4H511638
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
Vout(V)
Pullup Characteristics for Weak Output Driver
Pulldown Characteristics for Weak Output Driver
相關(guān)PDF資料
PDF描述
K4H511638C-UC 512Mb C-die DDR SDRAM Specification
K4H510438C-ZLCC DIN Audio Connector; No. of Contacts:6; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes
K4H511638C-ZLCC DIN Audio Connector; No. of Contacts:8; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes
K4H510438C-ZLB3 Connector Kit; Contents Of Kit:C14610F0240031 24 position bulkhead housing single latch spring cover, C14610B0241021 24 position female insert wire protect, With spring cover; For Use With:C146 Heavy Duty Industrial Connectors RoHS Compliant: Yes
K4H511638C-ZLB3 Connector Kit; Contents Of Kit:C14610G0246008 24 position hood PG 21 double latch high profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes
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