參數(shù)資料
型號: K4H510838D-UCC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70
中文描述: ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(符合RoHS)
文件頁數(shù): 22/24頁
文件大?。?/td> 366K
代理商: K4H510838D-UCC
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Table 8. Full Strength Driver Characteristics
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High
Minimum
Maximum
Typical
Low
Typical
High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
0.2
12.2
13.5
9.2
18.2
-12.2
-14.5
-9.2
-20.0
0.3
18.1
20.1
13.8
26.0
-18.1
-21.2
-13.8
-29.8
0.4
24.1
26.6
18.4
33.9
-24.0
-27.7
-18.4
-38.8
0.5
29.8
33.0
23.0
41.8
-29.8
-34.1
-23.0
-46.8
0.6
34.6
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
0.7
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
0.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
相關(guān)PDF資料
PDF描述
K4H510838E-TCA0 Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70
K4H511638D 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D-UC3 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H510838B-N 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
K4H510838A-TCA0 DIODE ZENER SINGLE 500mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-123 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H510838D-ZCB3T00 制造商:Samsung Semiconductor 功能描述:
K4H510838E-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510838E-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510838E-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510838E-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM