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參數(shù)資料
| 型號： | K4H510838D-UC3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 |
| 中文描述： | ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費（符合RoHS） |
| 文件頁數(shù)： | 23/24頁 |
| 文件大小： | 366K |
| 代理商： | K4H510838D-UC3 |
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
Vout(V)
Pullup Characteristics for Weak Output Driver
Pulldown Characteristics for Weak Output Driver
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510838D-UCC | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 |
| K4H510838E-TCA0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 |
| K4H511638D | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-UC3 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838B-N | 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838D-UCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-ZCB3T00 | 制造商:Samsung Semiconductor 功能描述: |
| K4H510838E-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838E-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838E-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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