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參數(shù)資料
| 型號(hào)： | K4H510838C-ULB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 |
| 中文描述： | 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 366K |
| 代理商： | K4H510838C-ULB3 |
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Parameter
Specification
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.2 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.4V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
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| K4H510838C-ULCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification |
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