- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374270 > K4H510438E-TLB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 PDF資料下載
參數(shù)資料
| 型號(hào)： | K4H510438E-TLB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 22/24頁(yè) |
| 文件大?。?/td> | 367K |
| 代理商： | K4H510438E-TLB0 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)當(dāng)前第22頁(yè)第23頁(yè)第24頁(yè)
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Table 8. Full Strength Driver Characteristics
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High
Minimum
Maximum
Typical
Low
Typical
High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
0.2
12.2
13.5
9.2
18.2
-12.2
-14.5
-9.2
-20.0
0.3
18.1
20.1
13.8
26.0
-18.1
-21.2
-13.8
-29.8
0.4
24.1
26.6
18.4
33.9
-24.0
-27.7
-18.4
-38.8
0.5
29.8
33.0
23.0
41.8
-29.8
-34.1
-23.0
-46.8
0.6
34.6
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
0.7
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
0.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510438M-TCA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 |
| K4H510438M-TCB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70 |
| K4H510438M-TLA0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70 |
| K4H510438M-TLA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70 |
| K4H510438M-TLB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510438F | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H510438F-LC/LB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H510438F-LC/LB3 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H510438G | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Consumer Memory |
| K4H510438G-LC/LB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb G-die DDR SDRAM Specification |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。