參數(shù)資料
型號(hào)： K4H510438C-UCB3
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb C-die DDR SDRAM Specification
中文描述： 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格
文件頁數(shù)： 4/24頁
文件大?。?/td> 367K
代理商： K4H510438C-UCB3
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM for write masking only (x16)
DM for write masking only (x4, x8)
Auto & Self refresh
7.8us refresh interval(8K/64ms refresh)
Maximum burst refresh cycle : 8
66pin TSOP II
Pb-Free
package
RoHS compliant
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
Speed @CL2
-
133MHz
133MHz
100MHz
Speed @CL2.5
166MHz
166MHz
133MHz
133MHz
Speed @CL3
200MHz
-
-
-
CL-tRCD-tRP
3-3-3
2.5-3-3
2-3-3
2.5-3-3
Part No.
Org.
Max Freq.
Interface
Package
K4H510438C-UC/LB3
128M x 4
B3(DDR333@CL=2.5)
SSTL2
66pin TSOP II
K4H510438C-UC/LA2
A2(DDR266@CL=2)
K4H510438C-UC/LB0
B0(DDR266@CL=2.5)
K4H510838C-UC/LCC
64M x 8
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H510838C-UC/LB3
B3(DDR333@CL=2.5)
K4H510838C-UC/LA2
A2(DDR266@CL=2)
K4H510838C-UC/LB0
B0(DDR266@CL=2.5)
K4H511638C-UC/LCC
32M x 16
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H511638C-UC/LB3
B3(DDR333@CL=2.5)
K4H511638C-UC/LA2
A2(DDR266@CL=2)
K4H511638C-UC/LB0
B0(DDR266@CL=2.5)
1.0 Key Features
2.0 Ordering Information
3.0 Operating Frequencies
相關(guān)PDF資料
PDF描述
K4H510438 512Mb B-die DDR SDRAM Specification
K4H510438A-TCA0 DIODE ZENER SINGLE 200mW 5.1Vz 0.05mA-Izt 0.05 5uA-Ir 3 SOD-323 3K/REEL
K4H510438A-TCA2 ENCLOSURE, DIN IP65 9 MODULEENCLOSURE, DIN IP65 9 MODULE; Length / Height, external:200mm; Width, external:190mm; Depth, external:105mm; Material:Polycarbonate; Colour:Light Grey; RAL number:7035
K4H510438A-TCB0 Enclosures; For Use With:MNX Series Polycarbonate Enclosures; Approval Bodies:UL, CSA; External Height:3.9"; External Width:1.9"; Panel Height:3.9"; Panel Width:1.9"; Size/Dimensions:39 x 1.9; Enclosure Color:Silver
K4H510438A-TLA0 Enclosures; For Use With:MNX Series Polycarbonate Enclosures; Approval Bodies:UL, CSA; External Height:3.9"; External Width:3.9"; Panel Height:3.9"; Panel Width:3.9"; Size/Dimensions:3.9 x 3.9; Enclosure Color:Silver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H510438C-ULA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification
K4H510438C-ULB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification
K4H510438C-ULB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification
K4H510438C-ZCB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification
K4H510438C-ZCCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification
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