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參數(shù)資料
| 型號(hào)： | K4H2G0638A-UC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Stacked 2Gb A-die SDRAM Specification |
| 中文描述： | 堆疊的2Gb阿模內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 14/23頁 |
| 文件大?。?/td> | 357K |
| 代理商： | K4H2G0638A-UC |
Rev. 0.0 June. 2005
DDR SDRAM stacked 2Gb A-die (x4)
DDR SDRAM
Preliminary
Parameter
Specification
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.2 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.4V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K4H2G0638A-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 2Gb A-die SDRAM Specification |
| K4H2G0638A-UC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 2Gb A-die SDRAM Specification |
| K4H2G0638A-UC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 2Gb A-die SDRAM Specification |
| K4H2G0638A-UC/LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 2Gb A-die SDRAM Specification |
| K4H510438 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification |
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