參數(shù)資料
        

        


        


        
型號(hào)：
K4H1G0838E-TLB0

        

        
廠商：
SAMSUNG SEMICONDUCTOR CO. LTD.

        

        
英文描述：
128Mb DDR SDRAM

        

        
中文描述：
128MB DDR SDRAM的

        

        
文件頁(yè)數(shù)：
28/53頁(yè)

        

        
文件大?。?/td>
669K

        

        
代理商：
K4H1G0838E-TLB0


        

        

        

	
        
    
    

    
        
	
        -  28  -
        REV. 1.0 November. 2. 2000
        128Mb DDR SDRAM
        3.3.10 DM masking
        The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read
        cycle. When the data mask is activated (DM high) during write operation, DDR SDRAM does not accept the
        corresponding data.(DM to data-mask  latency is zero).
        DM must be issued at the rising or falling edge of data strobe.
        Command
        < Burst Length=8 >
        WRITE
        NOP
        NOP
        NOP
        NOP
        NOP
        NOP
        NOP
        NOP
        DQS
        DQ
         ′
        s
        Din 0
        Din 1
        Din 2
        Din 3
        t
        DQSS
        DM
        Din 4
        Din 5
        Din 6
        Din7
        masked by DM=H
        2
        0
        1
        5
        3
        4
        8
        6
        7
        CK
        CK
        6.   When terminating a burst Read command, the BST command must be issued L
        BST
         (“BST Latency”) clock 
        cycles before the clock edge at which the output buffers are tristated, where L
        BST
         equals the CAS latency 
        for read operations.  This is shown in previous page Figure with examples for CAS latency (CL) of 1.5, 2, 
        2.5, 3 and 3.5 (only selected CAS latencies are required by the DDR SDRAM standards, the others are 
        optional).
        7.   When the burst terminates, the DQ and DQS pins are tristated.
        The BST command is not byte controllable and applies to all bits in the DQ data word and the(all) DQS pin(s).
        Figure 18. DM masking timing
        
    
        
    
    
        


        


        

        相關(guān)PDF資料
        		

        PDF描述
        		

        
        

        
K4H1G0838M-TCA2
128Mb DDR SDRAM

        

        
K4H1G0838M-TCB0
128Mb DDR SDRAM

        

        
K4H1G0838M-TLA0
128Mb DDR SDRAM

        

        
K4H1G0838M-TLA2
128Mb DDR SDRAM

        

        
K4H1G0838M-TLB0
128Mb DDR SDRAM

        

        

        

        


        


        

        相關(guān)代理商/技術(shù)參數(shù)
        		

        參數(shù)描述
        		

        
        

        
K4H1G0838M-LA2
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

        

        
K4H1G0838M-LB0
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

        

        
K4H1G0838M-LB3
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

        

        
K4H1G0838M-TC/LA2
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification

        

        
K4H1G0838M-TC/LB0
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification

        

        
    
    
    
	
        	
    
    
     
     
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