- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374265 > K4H1G0438M-ULB3 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) PDF資料下載
參數(shù)資料
| 型號： | K4H1G0438M-ULB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 1Gb的的M -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費（符合RoHS） |
| 文件頁數(shù)： | 20/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | K4H1G0438M-ULB3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
- 20 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.1 Burst Read Operation
Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read
command is issued by asserting CS and CAS low while holding RAS and WE high at the rising edge of the
clock(CK) after tRCD from the bank activation. The address inputs (A0~A9) determine the starting address for
the Burst. The Mode Register sets type of burst(Sequential or interleave) and burst length(2, 4, 8). The first
output data is available after the CAS Latency from the READ command, and the consecutive data are pre-
sented on the falling and rising edge of Data Strobe(DQS) adopted by DDR SDRAM until the burst length is
completed.
Command
< Burst Length=4, CAS Latency= 2, 2.5 >
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
CAS Latency=2
Dout 0 Dout 1 Dout 2 Dout 3
DQS
DQ
′
s
CAS Latency=2.5
Dout 0 Dout 1 Dout 2 Dout 3
2
0
1
5
3
4
8
6
7
t
RPRE
t
RPST
CK
CK
3.3 Essential Functionality for DDR SDRAM
The essential functionality that is required for the DDR SDRAM device is described in this chapter
Figure 9. Burst read operation timing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H1G0838D-TLA2 | 128Mb DDR SDRAM |
| K4H1G0838D-TLB0 | RES, CHIP 1K OHM |
| K4H1G0838E-TCA0 | 128Mb DDR SDRAM |
| K4H1G0838E-TCA2 | 128Mb DDR SDRAM |
| K4H1G0838E-TCB0 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H1G0638C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0638C-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0638C-UC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0738C-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0738C-UC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。