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參數(shù)資料

型號(hào)：	K4H1G0438E-TLA2
廠(chǎng)商：	SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述：	128Mb DDR SDRAM
中文描述：	128MB DDR SDRAM的
文件頁(yè)數(shù)：	24/53頁(yè)
文件大?。?/td>	669K
代理商：	K4H1G0438E-TLA2

- 24 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3.3.6 Write Interrupted by a Write

A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-

tion that the interval that separates the commands must be at least one clock cycle. When the previous burst

is interrupted, the remaining addresses are overridden by the new address and data will be written into the

device until the programmed burst length is satisfied.

Command

< Burst Length=4 >

NOP

WRITE A

WRITE b

NOP

DQS

′

Din A

Din B

Figure 14. Write interrupted by a write timing

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相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
K4H1G0438E-TLB0	制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H1G0438M	制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
K4H1G0438M-LA2	制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-LB0	制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-LB3	制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

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