- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374259 > K4H1G0438E-TCA2 (SAMSUNG SEMICONDUCTOR CO. LTD.) Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號(hào)： | K4H1G0438E-TCA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 30/53頁(yè) |
| 文件大?。?/td> | 669K |
| 代理商： | K4H1G0438E-TCA2 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)當(dāng)前第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)
- 30 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.12 Write with Auto Precharge
If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new
command to the same bank should not be issued until the internal precharge is completed. The internal pre-
charge begins after keeping tWR(min).
Command
< Burst Length=4 >
BANK A
ACTIVE
NOP
WRITE A
Auto Precharge
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
Din 0 Din 1 Din 2
Din 3
* completion of
t
RP
t
WR
t
RP
Internal precharge start
2
0
1
5
3
4
8
6
7
CK
CK
Figure 20. Write with auto precharge timing
Asserted
command
For same Bank
For Different Bank
3
4
5
6
7
8
3
4
5
6
7
WRITE
WRITE+
No AP
*1
WRITE+
No AP
WRITE+
No AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
WRITE+
AP
WRITE+
AP
WRITE+
AP
WRITE+
AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
READ
Illegal
READ+NO
AP+DM
*2
READ+NO
AP+DM
READ+
NO AP
READ+
NO AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
READ+AP
Illegal
READ +
AP+DM
READ +
AP+DM
READ +
AP
READ +
AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
Active
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
Precharge
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
*1
: AP = Auto Precharge
*2
: DM : Refer to "
3.3.7 Write Interrupted by a Read & DM "
in page 25.
Table 7. Operating description when new command asserted
while write with auto precharge is issued
Burst length = 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H1G0438E-TCB0 | 128Mb DDR SDRAM |
| K4H1G0438E-TLA0 | 128Mb DDR SDRAM |
| K4H1G0438E-TLA2 | 128Mb DDR SDRAM |
| K4H1G0438E-TLB0 | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk |
| K4H1G0838A-TCA2 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H1G0438E-TCB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G0438E-TLA0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G0438E-TLA2 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G0438E-TLB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G0438M | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。