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參數(shù)資料
| 型號： | K4F641612E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 4米× 16位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 3/35頁 |
| 文件大小： | 400K |
| 代理商： | K4F641612E |
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CMOS DRAM
K4F661612E,
K4F641612E
Industrial Temperature
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= -40 to 85
°
C)
*1 : Vcc+1.3V at pulse width
≤
15ns which is measured at V
CC
*2 : -1.3 at pulse width
≤
15ns which is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
Vcc+0.3
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V,
all other pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
相關PDF資料 |
PDF描述 |
|---|---|
| K4F661612E | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4H1G0838A-TCA0 | DIODE ZENER SINGLE 200mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-323 3K/REEL |
| K4H641638A-TCA0 | DIODE ZENER SINGLE 150mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-523 3K/REEL |
| K4H281638A-TCA0 | DIODE ZENER SINGLE 500mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-123 3K/REEL |
| K4H1G1638A-TCA0 | DIODE ZENER SINGLE 500mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-123 3K/REEL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4F660412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660811B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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