參數(shù)資料
型號(hào): K4E661612D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS DRAM
中文描述: 的CMOS內(nèi)存
文件頁(yè)數(shù): 23/36頁(yè)
文件大?。?/td> 397K
代理商: K4E661612D
CMOS DRAM
K4E661612D,K4E641612D
Industrial Temperature
t
OEA
t
OLZ
t
CLZ
RAS
V
IH
-
V
IL
-
UCAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR
t
RASP
t
RP
t
CRP
Don
t care
HYPER PAGE MODE LOWER BYTE READ CYCLE
Undefined
LCAS
V
IH
-
V
IL
-
V
OH
-
V
OL
-
DQ0 ~ DQ7
V
OH
-
V
OL
-
DQ8 ~ DQ15
COLUMN
ADDRESS
t
REZ
t
RHCP
t
HPC
t
CSH
t
RCD
t
CAS
t
CAS
t
CAS
t
CAS
t
CP
t
CP
t
CP
t
RAD
t
RAH
t
RCS
t
RCH
t
RRH
COLUMN
ADDRESS
COLUMN
ADDR
t
OEZ
t
OEP
t
CHO
t
CPA
t
CAC
VALID
DATA-OUT
t
OEP
t
OEZ
t
RAC
t
CAC
t
DOH
VALID
DATA-OUT
VALID
DATA-OUT
t
OCH
t
CPA
t
CAC
t
AA
t
CAC
t
AA
t
CPA
t
OEZ
VALID
DATA-OUT
VALID
DATA-OUT
OPEN
ó
t
RPC
t
ASR
t
ASC
t
CAH
t
ASC
t
CAH
t
CAH
t
ASC
t
CAH
t
ASC
t
AA
t
HPC
t
HPC
t
AA
t
OEA
t
RAL
相關(guān)PDF資料
PDF描述
K4E660412D 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640412D 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660812B 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E640812B 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E660812C 8M x 8bit CMOS Dynamic RAM with Extended Data Out
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4E661612E-TC50 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 EDO DRAM, 50 ns, PDSO50
K4E-6V-1 制造商:Panasonic Electric Works 功能描述:
K4E-6V-9 制造商:Panasonic Electric Works 功能描述:
K4EB1101J 制造商:Panasonic Electric Works 功能描述:
K4EB121 制造商:Panasonic Electric Works 功能描述:RELAY K4 12V