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參數(shù)資料
| 型號： | K4E660812B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 8米× 8位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 416K |
| 代理商： | K4E660812B |
CMOS DRAM
K4E660812B,
K4E640812B
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=CAS-before-RAS cycling or 0.2V
W, OE=V
IH
, Address=Don
′
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ7=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4E660812B
K4E640812B
I
CC1
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
L
Don
′
t care
2
2
2
2
mA
mA
I
CC3
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-50
-60
110
100
90
120
110
100
mA
mA
mA
I
CC5
Normal
L
Don
′
t care
500
300
500
300
uA
uA
I
CC6
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC7
L
Don
′
t care
400
400
uA
I
CCS
L
Don
′
t care
400
400
uA
相關PDF資料 |
PDF描述 |
|---|---|
| K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4E660812C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E-JC/L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E-TC/L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E661611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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