型號: | K4E660812B |
廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. |
英文描述: | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
中文描述: | 8米× 8位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
文件頁數(shù): | 21/21頁 |
文件大?。?/td> | 416K |
代理商: | K4E660812B |
相關(guān)PDF資料 |
PDF描述 |
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K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E660812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E640812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E660812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E640812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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K4E660812C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E660812E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E660812E-JC/L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E660812E-TC/L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
K4E661611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |