參數(shù)資料
型號: K4E641612D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS DRAM
中文描述: 的CMOS內存
文件頁數(shù): 4/36頁
文件大?。?/td> 397K
代理商: K4E641612D
CMOS DRAM
K4E661612D,K4E641612D
Industrial Temperature
*Note :
I
CC1
, I
CC3
, I
C C 4
a n d I
CC6
a r e d e p e n d e n t o n o u t p u t l o a d i n g a n d c y c l e r a t e s . S p e c i f i e d v a l u e s a r e o b t a i n e d w i t h t h e o u t p u t o p e n .
I
CC
is specified as an average current. In I
CC1
, I
C C 3
a n d I
CC6,
a d d r e s s c a n b e c h a n g e d m a x i m u m o n c e w h i l e R A S = V
IL
. In I
CC4
,
a d d r e s s c a n b e c h a n g e d m a x i m u m o n c e w i t h i n o n e E D O m o d e c y c l e t i m e ,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
( C o n t i n u e d )
I
C C 1
* : Operating Current (R A S a n d U C A S , L C A S , Address cycling @
t
R C
=min.)
I
C C 2
: Standby Current ( R A S= U C A S= L C A S =W = V
IH
)
I
C C 3
* : R A S -only Refresh Current ( U C A S = L C A S=V
IH
, R A S, A d d r e s s c y c l i n g @
t
RC
= m i n . )
I
C C 4
* : E x t e n d e d D a t a O u t M o d e C u r r e n t ( R A S=V
IL
, U C A S or L C A S , Address cycling @
t
HPC
=min.)
I
C C 5
: Standby Current ( R A S= U C A S= L C A S =W = V
CC
- 0 . 2 V )
C C 6
* : C A S -Before- R A S Refresh Current (R A S a n d U C A S or L C A S cycling @
t
R C
= m i n )
I
C C 7
: B a t t e r y b a c k - u p c u r r e n t , A v e r a g e p o w e r s u p p l y c u r r e n t , B a t t e r y b a c k - u p m o d e
Input high voltage(V
IH
) = V
C C
-0.2V, Input low voltage(V
IL
)=0.2V, U C A S , L C A S = C A S -before-R A S cycling or 0.2V
W , O E =V
IH
, A d d r e s s = D o n
t c a r e , D Q = O p e n , T
RC
= 3 1 . 2 5 u s
I
C C S
: Self Refresh Current
R A S= U C A S =L C A S = 0 . 2 V , W = O E = A 0 ~ A 1 2 ( A 1 1 ) = V
C C
- 0 . 2 V o r 0 . 2 V , D Q 0 ~ D Q 1 5 = V
CC
- 0 . 2 V , 0 . 2 V o r O p e n
Symbol
Power
Speed
Max
Units
K 4 E 6 6 1 6 1 2 D
K 4 E 6 4 1 6 1 2 D
I
C C 1
D o n
t care
- 4 5
- 5 0
- 6 0
90
80
70
1 3 0
1 2 0
1 1 0
m A
m A
m A
I
C C 2
N o r m a l
L
D o n
t care
1
1
1
1
m A
m A
I
C C 3
D o n
t care
- 4 5
- 5 0
- 6 0
90
80
70
1 3 0
1 2 0
1 1 0
m A
m A
m A
I
C C 4
D o n
t care
- 4 5
- 5 0
- 6 0
100
90
80
1 0 0
90
80
m A
m A
m A
I
C C 5
N o r m a l
L
D o n
t c a r e
0.5
200
0.5
2 0 0
m A
u A
I
C C 6
D o n
t care
- 4 5
- 5 0
- 6 0
130
120
110
1 3 0
1 2 0
1 1 0
m A
m A
m A
I
C C 7
L
D o n
t c a r e
350
3 5 0
u A
I
C C S
L
D o n
t c a r e
350
3 5 0
u A
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