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參數(shù)資料
| 型號： | K4E640412D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 16米x 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 17/21頁 |
| 文件大?。?/td> | 415K |
| 代理商： | K4E640412D |
CMOS DRAM
K4E660412D,K4E640412D
Don
′
t care
RAS - ONLY REFRESH CYCLE*
NOTE : W, OE, D
IN
= Don
′
t care
Undefined
D
OUT
= OPEN
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
ROW
ADDR
t
RC
t
RP
t
ASR
t
CRP
t
RAS
t
RAH
t
RPC
t
CRP
OPEN
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE , A = Don
′
t care
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
t
RC
t
RP
t
RAS
t
RPC
t
CP
t
RPC
t
CSR
t
CHR
t
CEZ
V
OH
-
V
OL
-
DQ0 ~ DQ3(7)
t
WRP
t
WRH
W
V
IH
-
V
IL
-
t
RP
相關(guān)PDF資料 |
PDF描述 |
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| K4E660812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E640812C | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| K4E660812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640412D-TC50 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 64M-Bit 16Mx4 3.3V 32-Pin TSOP-II |
| K4E640412D-TL50 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 64M-Bit 16Mx4 3.3V 32-Pin TSOP-II |
| K4E640412E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
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