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參數(shù)資料
| 型號(hào)： | K4D551638F-TC33 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mbit GDDR SDRAM |
| 中文描述： | 片256Mbit GDDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 206K |
| 代理商： | K4D551638F-TC33 |
256M GDDR SDRAM
K4D551638F-TC
- 2 -
Rev 1.7 (June 2004)
Target Spec
Revision History
Revision 1.7 (June 15, 2004) -
Target Spec
Changed VDD/VDDQ of K4D551638F-TC33 from 2.8V + 0.1V to 2.8V(min)/2.95V(max)
Revision 1.6 (March 31, 2004) -
Target Spec
AC Changes : Refer to the AC characteristics of page 13 and 14.
Revision 1.5 (March 18, 2004) -
Target Spec
Added K4D551638F-TC33 in the data sheet.
Revision 1.4 (February 27, 2004) -
Target Spec
Added K4D551638F-TC36/40 in the data sheet.
Revision 1.3 (December 5, 2003)
Changed VDD/VDDQ of K4D551638F-TC50 from 2.5V + 5% to 2.6V + 0.1V
Revision 1.2 (November 11, 2003)
"Wrtie-Interrupted by Read Function" is supported
Revision 1.1 (October 13, 2003)
Defined ICC7 value
Revision 1.0 (October 10, 2003)
Defined DC spec
Changed part number of 16Mx16 GDDR F-die from K4D561638F-TC to K4D551638F-TC.
Revision 0.1 (October 2, 2003) -
Target Spec
Added Lead free package part number in the data sheet.
Removed K4D561638F-TC40 from the data sheet.
Revision 0.0 (July 2, 2003) -
Target Spec
Defined Target Specification
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D551638F-TC36 | 256Mbit GDDR SDRAM |
| K4D551638F-TC40 | 256Mbit GDDR SDRAM |
| K4D551638F-TC50 | 256Mbit GDDR SDRAM |
| K4D551638F-TC60 | 256Mbit GDDR SDRAM |
| K4D553235F-GC | 256M GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D551638F-TC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D551638F-TC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D551638F-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D551638F-TC50000 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip GDDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP-II |
| K4D551638F-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
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