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參數(shù)資料
| 型號(hào)： | K4D26323RA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CABLE ASSEMBLY; SMB PLUG TO SMB JACK BULKHEAD; 50 OHM, RG316/U COAX; |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步RAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 315K |
| 代理商： | K4D26323RA |
128M GDDR SDRAM
K4D26323QG-GC
- 11 -
Rev 1.2(Mar. 2005)
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
Note :
1. Measured with output open
2. Refresh period is 32ms
3. Current meassured at VDD(max)
Parameter
Symbol
Test Condition
Version
Unit
Note
-25
-2A
-33
Operating Current
(One Bank Active)
I
CC1
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
260
230
220
mA
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
10
10
10
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
65
60
50
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
65
60
50
mA
Active Standby Current
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
210
190
170
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
475
440
410
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
(min)
265
240
225
mA
1
Self Refresh Current
I
CC6
CKE
≤
0.2V
8
mA
Operating Current
(4Bank interleaving)
I
CC7
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
570
520
460
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage ;DQ
V
IH
V
REF
+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
V
IL
-
-
V
REF
-0.35
V
Clock Input Differential Voltage; CK and CK
V
ID
0.7
-
V
DDQ
+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
V
IX
0.5*V
DDQ
-0.2
-
0.5*V
DDQ
+0.2
V
2
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
Note :
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|---|---|
| K4D26323RA-GC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
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