參數(shù)資料
型號: K4D26323RA-GC33
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
中文描述: 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步RAM的雙向數(shù)據(jù)選通和DLL
文件頁數(shù): 2/18頁
文件大?。?/td> 315K
代理商: K4D26323RA-GC33
128M GDDR SDRAM
K4D26323QG-GC
- 2 -
Rev 1.2(Mar. 2005)
Revision History
Revision 1.2 (March 04, 2005)
Removed K4D26323QG-GC22 from the datasheet
Revision 1.1 (November 26, 2004)
Removed -GC20 from the spec.
Changed AC spec format
Changed DC spec measurement condition from VDD(typ) to VDD(max)
Revision 1.0 (June 23, 2004)
Changed tDQSCK/tAC of -GC22/25 from 0.55tCK to 0.45tCK
Changed tDQSCK/tAC of -GC20 from 0.55tCK to 0.35tCK
Revision 0.4 (June 04, 2004)
-
Preliminary
Removed K4D26323QG-GC40 from the spec
Changed VDD&VDDQ of -GC20/22 from 1.8V+0.1V to 2.0V+0.1V
Changed AC characteristics table on page 15~ 16 from number of clock-based to ns-based. Also key parameters are
changed as below
- Changed tRFC/tWR_A/tDAL of -GC20 from 23tCK/6tCK to 25tCK/7tCK/14tCK
- Changed tRFC/tWR_A/tDAL of -GC22 from 22tCK/6tCK to 23tCK/7tCK/14tCK
- Changed tRC/tRFC/tRP/tWR_A/tDAL of -GC25 from 17tCK/19tCK/5tCK/5tCK/10tCK to 18tCK/20tCK/6tCK/6tCK/12tCK
- Changed tRC/tRFC/tRP/tRCD/tRP/tWR_A/tDAL of -GC2A from 15tCK/17tCK/5tCK/5tCK/10tCK to 16tCK/18tCK/6tCK/6tCK/12tCK
- Changed tRC/tRFC/tRAS/tRP/tWR_A/tDAL of -GC33 from 13tCK/15tCK/9tCK/4tCK/4tCK to 15tCK/17tCK/10tCK/5tCK/5tCK/10tCK
Added DC target spec
Revision 0.3 (April 22, 2004)
Changed tCK(max) of K4D26323QG-GC22 from 10ns to 5ns
Changed tWR of K4D26323QG-GC20 from 6tCK to 7tCK
Changed tWR of K4D26323QG-GC22 from 6tCK to 7tCK
Changed tWR of K4D26323QG-GC25 from 5tCK to 6tCK
Changed tWR of K4D26323QG-GC33 from 4tCK to 5tCK
Changed tWR of K4D26323QG-GC40 from 3tCK to 4tCK
Revision 0.2 (April 20, 2004)
Changed tCK(max) of K4D26323QG-GC20 from 10ns to 5ns
Revision 0.1 (April 16, 2004)
Typo corrected
Revision 0.0 (February 2, 2004) -
Target Spec
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