參數(shù)資料
型號: K4D26323QG-GC2A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit GDDR SDRAM
中文描述: 128Mbit GDDR SDRAM內存
文件頁數(shù): 16/18頁
文件大?。?/td> 315K
代理商: K4D26323QG-GC2A
128M GDDR SDRAM
K4D26323QG-GC
- 16 -
Rev 1.2(Mar. 2005)
AC CHARACTERISTICS (III)
K4D26323QG-GC25
Frequency
400MHz ( 2.5ns )
350MHz ( 2.86ns )
300MHz ( 3.3ns )
Cas Latency
5
5
4
tRC
18
16
15
tRFC
20
18
17
tRAS
12
10
10
tRCDRD
6
6
5
tRCDWR
4
4
3
tRP
6
6
5
tRRD
4
4
3
tDAL
12
12
10
Unit
tCK
tCK
tCK
K4D26323QG-GC2A
Frequency
350MHz ( 2.86ns )
300MHz ( 3.3ns )
Cas Latency
5
4
tRC
16
15
tRFC
18
17
tRAS
10
10
tRCDRD
6
5
tRCDWR
4
3
tRP
6
5
tRRD
4
3
tDAL
12
10
Unit
tCK
tCK
K4D26323QG-GC33
Frequency
300MHz ( 3.3ns )
Cas Latency
4
tRC
15
tRFC
17
tRAS
10
tRCDRD
5
tRCDWR
3
tRP
5
tRRD
3
tDAL
10
Unit
tCK
(Unit : Number of Clock)
相關PDF資料
PDF描述
K4D26323QG-GC33 128Mbit GDDR SDRAM
K4D26323RA-GC 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D26323RA-GC2A 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D26323RA-GC33 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
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相關代理商/技術參數(shù)
參數(shù)描述
K4D26323QG-GC33 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM
K4D26323RA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D26323RA-GC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D26323RA-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D26323RA-GC33 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL