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參數(shù)資料
| 型號： | K4D263238M-QC45 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步RAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 10/19頁 |
| 文件大小： | 281K |
| 代理商： | K4D263238M-QC45 |
128M DDR SDRAM
K4D263238M
- 10 -
Rev. 1.3 (Aug. 2001)
The extended mode register stores the data for enabling or disabling DLL and selecting output driver strength. The
default value of the extended mode register is not defined, therefore the extend mode register must be written after power
up for enabling or disabling DLL. The extended mode register is written by asserting low on CS, RAS, CAS, WE and high
on BA0(The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode
register). The state of address pins A0, A2 ~ A5, A7 ~ A11 and BA1 in the same cycle as CS, RAS, CAS and WE going
low are written in the extended mode register. A1 and A6 are used for setting driver strength to weak or matched imped-
ance. Two clock cycles are required to complete the write operation in the extended mode register. The mode register
contents can be changed using the same command and clock cycle requirements during operation as long as all banks
are in the idle state. A0 is used for DLL enable or disable. “High” on BA0 is used for EMRS. All the other address pins
except A0,A1,A6 and BA0 must be set to low for proper EMRS operation. Refer to the table for specific codes.
A
0
DLL Enable
0
Enable
1
Disable
BA
0
A
n
~ A
0
0
MRS
1
EMRS
Figure 7. Extend Mode Register set
EXTENDED MODE REGISTER SET(EMRS)
Address Bus
Extended
Mode Register
BA
1
BA
0
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
RFU
1
RFU
D.I.C
RFU
D.I.C
DLL
* RFU(Reserved for future use)
should stay "0" during EMRS
cycle.
A
6
0
1
A
1
1
1
Output Driver Impedance Control
Weak
60% of full drive strength
Matched impedance 30% of full drive strength
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D263238M-QC50 | DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL |
| K4D263238M-QC55 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D263238M-QC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D263238M-QC50000 | 制造商:Samsung SDI 功能描述: |
| K4D263238M-QC55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D263238M-QC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323QG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM |
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