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參數(shù)資料
| 型號： | K4D263238D-QC50 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 18/18頁 |
| 文件大?。?/td> | 239K |
| 代理商： | K4D263238D-QC50 |
128M DDR SDRAM
K4D263238D
- 18 -
Rev. 1.3 (Jul. 2002)
0.825
0
0.65
0.13 MAX
PACKAGE DIMENSIONS (TQFP)
Dimensions in Millimeters
0.10 MAX
0 ~ 7
°
17.20
±
0.20
14.00
±
0.10
23.20
±
0.20
1.00
±
0.10
1.20 MAX *
0.05 MIN
0.80
±
0.20
#1
0.09~0.20
#100
0.30
±
0.08
20.00
±
0.10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D263238E | Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk |
| K4D263238E-GC25 | DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL |
| K4D263238E-GC2A | DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL |
| K4D263238E-GC33 | DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL |
| K4D263238E-GC36 | DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D263238E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E-GC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238E-GC33 | 制造商:SAMSG 功能描述: |
| K4D263238E-GC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
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