參數(shù)資料
型號: K4D263238D-QC50
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
中文描述: 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁數(shù): 17/18頁
文件大?。?/td> 239K
代理商: K4D263238D-QC50
128M DDR SDRAM
K4D263238D
- 17 -
Rev. 1.3 (Jul. 2002)
0
1
2
3
4
5
6
7
8
BAa
Ra
Ra
tRCD
ACTIVEA
ACTIVEB
WRITEA
WRITEB
Db0
Db1
Db3
13
14
15
16
17
18
19
20
21
BAa
BAb
Ca
Cb
BAa
Ca
9
10
11
12
PRECH
BAa
22
Ra
Da0
Da1
Da2
Da3
Normal Write Burst
(@ BL=4)
Multi Bank Interleaving Write Burst
(@ BL=4)
BAa
Ra
Ra
BAb
Rb
Rb
Db2
tRAS
tRC
tRP
tRRD
COMMAND
DQS
DQ
WE
DM
CK, CK
A8/AP
ADDR
(A0~A7,
BA[1:0]
ACTIVEA
WRITEA
Da0
Da1
Da2
Da3
Simplified Timing(2) @ BL=4, CL=3
相關(guān)PDF資料
PDF描述
K4D263238E Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk
K4D263238E-GC25 DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC2A DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
K4D263238E-GC33 DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC36 DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC33 制造商:SAMSG 功能描述:
K4D263238E-GC36 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL