參數(shù)資料
型號(hào)： K4D263238D-QC40
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
中文描述： 100萬(wàn)x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁(yè)數(shù)： 15/18頁(yè)
文件大小： 239K
代理商： K4D263238D-QC40
128M DDR SDRAM
K4D263238D
- 15 -
Rev. 1.3 (Jul. 2002)
AC CHARACTERISTICS (I)
Note :
1 For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-40
-50
Unit
Note
Min
Max
Min
Max
Row cycle time
t
RC
t
RFC
t
RAS
t
RCDRD
t
RCDWR
t
RP
t
RRD
t
WR
t
CDLR
t
CCD
t
MRD
t
DAL
t
XSR
t
PDEX
t
REF
15
-
12
-
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
17
10
5
3
5
3
3
2
1
2
-
14
8
4
2
4
2
2
2
1
2
-
100K
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
Auto precharge write recovery + Precharge
8
-
6
-
Exit self refresh to read command
Power down exit time
Refresh interval time
200
-
200
-
-
-
1tCK+tIS
-
1tCK+tIS
7.8
-
7.8
相關(guān)PDF資料
PDF描述
K4D263238D-QC50 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk
K4D263238E-GC25 DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC2A DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
K4D263238E-GC33 DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238D-QC50 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC25 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC33 制造商:SAMSG 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*