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參數(shù)資料
| 型號： | K4D263238A-GC40 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 298K |
| 代理商： | K4D263238A-GC40 |
128M DDR SDRAM
K4D263238A-GC
- 2 -
Rev. 2.0 (Jan. 2003)
Revision History
Revision 2.0 (January 16, 2002)
Changed package ball height from 0.25mm to 0.35mm
Typo corrected
Revision 1.9 (July 18, 2002)
Changed power dissipation from 2.0W to 2.3W
Revision 1.8 (June 12, 2002)
Supported both CL4 and CL3 for the K4D263238A-GC45 and the effective date of this change starts from
WW23
Revision 1.6 (January 30, 2002)
Changed tCK(max) of K4D263238A-GC40 from 7ns to 10ns.
Changed tCK(max) of K4D263238A-GC33/36 from 5ns to 4ns.
For all the CL5 operation, guaranteed tCK(max) is 4ns.
Revision 1.5 (December 14, 2001)
Removed K4D26323RA-GC2A/33/36(VDD/VDDQ=2.8V) & K4D263238A-GC55/60 from the spec.
Added K4D263238A-GC36(VDD/VDDQ=2.5V)
Revision 1.4 (November 14, 2001)
Added K4D26323RA-GC36(VDD/VDDQ=2.8V)
Revision 1.3 (October 22, 2001)
Corrected part number of K4D263238A-GC2A to K4D26323RA-GC2A
Changed tCDLR of -GC2A and GC33 from 3tCK to 2tCK and applied since Sept 15, 2001.
Defined x32 DDR for mobile PC graphics separately - K4D26323AA-GL** featured with VDDQ=1.8V,ICC6=1mA with
reduced operating current. Refer to the K4D26323AA-GL** spec for more detail information.
Revision 1.2 (September 13, 2001)
Define DC spec value of K4D26323RA-GC33 and K4D263238A-GC2A
Changed tCK(max) of -2A and -33 from 7ns to 5ns
Revision 1.1 (September 3, 2001)
Added K4D26323RA-GC33(VDD/VDDQ=2.8V)
Added K4D263238A-GC2A(350MHz)
Revision 1.0 (August 16, 2001)
Changed tCDLR of K4D263238A-GC33 from 2tCK to 3tCK
Removed VDDQ=1.8V from the spec.
Added K4D263238A-GL as a low power part
Defined DC spec.
Revision 0.1 (August 2, 2001) -
Target Spec
Changed tCK(max) of K4D263238A-GC45/-50/-55/-60 from 7ns to 10ns.
Revision 0.0 (June, 2001) -
Target Spec
Defined Target Specification
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D263238A-GC45 | DIODE ZENER SINGLE 500mW 3.6Vz 0.05mA-Izt 0.05 7.5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238A-GC50 | DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238D | Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4D263238D-QC40 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D263238A-GC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
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