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參數(shù)資料
| 型號(hào)： | K4D263238A-GC40 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 16/17頁 |
| 文件大小： | 298K |
| 代理商： | K4D263238A-GC40 |
128M DDR SDRAM
K4D263238A-GC
- 16 -
Rev. 2.0 (Jan. 2003)
0
1
2
3
4
5
6
7
8
BAa
Ra
Ra
Ra
tRCD
ACTIVEA
ACTIVEB WRITEA
WRITEB
13
14
15
16
17
18
19
20
21
BAa
BAb
Ca
Cb
BAa
Ca
9
10
11
12
PRECH
BAa
22
Normal Write Burst
(@ BL=4)
Multi Bank Interleaving Write Burst
(@ BL=4)
BAa
Ra
Ra
BAb
Rb
Rb
tRAS
tRC
tRP
tRRD
COMMAND
DQS
DQ
WE
DM
CK, CK
A8/AP
(ADDR
BA[1:0]
ACTIVEA
WRITEA
Da0 Da1 Da2 Da3
Simplified Timing(2) @ BL=4
Db0 Db1
Db3
Da0 Da1 Da2 Da3
Db2
K4D263238A-GC40
Frequency
250MHz ( 4.0ns )
222MHz ( 4.5ns )
200MHz ( 5.0ns )
Cas Latency
4
4
3
tRC
15
13
12
tRFC
17
15
14
tRAS
10
9
8
tRCDRD
5
4
4
tRCDWR
3
2
2
tRP
5
4
4
tRRD
3
2
2
tDAL
8
7
7
Unit
tCK
tCK
tCK
K4D263238A-GC45
Frequency
222MHz ( 4.5ns )
200MHz ( 5.0ns )
Cas Latency
4/3
3
tRC
13
12
tRFC
15
14
tRAS
9
8
tRCDRD
4
4
tRCDWR
2
2
tRP
4
4
tRRD
2
2
tDAL
7
7
Unit
tCK
tCK
K4D263238A-GC50
Frequency
200MHz ( 5.0ns )
Cas Latency
3
tRC
12
tRFC
14
tRAS
8
tRCDRD
4
tRCDWR
2
tRP
4
tRRD
2
tDAL
7
Unit
tCK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D263238A-GC45 | DIODE ZENER SINGLE 500mW 3.6Vz 0.05mA-Izt 0.05 7.5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238A-GC50 | DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238D | Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4D263238D-QC40 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D263238A-GC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
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