參數(shù)資料
型號(hào): K4D261638F-TC33
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit GDDR SDRAM
中文描述: 128Mbit GDDR SDRAM內(nèi)存
文件頁(yè)數(shù): 16/18頁(yè)
文件大?。?/td> 225K
代理商: K4D261638F-TC33
128M GDDR SDRAM
K4D261638F
- 16 -
Rev. 1.2 (Jan. 2004)
AC CHARACTERISTICS (II - 2)
K4D261638F-TC36
Frequency
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
4
3
3
tRC
16
13
12
tRFC
17
15
14
tRAS
11
9
8
tRCDRD
4
4
4
tRCDWR
2
2
2
tRP
5
4
4
tRRD
3
3
3
tDAL
9
7
7
Unit
tCK
tCK
tCK
(Unit : Number of Clock)
AC CHARACTERISTICS (I - 2)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-36
-40
-50
Unit
Note
Min
16
17
11
4
2
5
3
Max
-
-
100K
-
-
-
-
Min
13
15
9
4
2
4
3
Max
-
-
100K
-
-
-
-
Min
12
14
8
4
2
4
3
Max
-
-
100K
-
-
-
-
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Normal Pre-
charge
Last data in to Row precharge @Auto Pre-
charge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Precharge
Exit self refresh to read command
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tWR
4
-
3
-
3
-
tCK
1
tWR_A
4
-
3
-
3
-
tCK
1
tCDLR
tCCD
tMRD
tDAL
tXSR
2
1
2
9
-
-
-
-
-
2
1
2
7
-
-
-
-
-
2
1
2
7
-
-
-
-
-
tCK
tCK
tCK
tCK
tCK
1
200
3tCK
+tIS
7.8
200
3tCK
+tIS
7.8
200
3tCK
+tIS
7.8
Power down exit time
tPDEX
-
-
-
ns
Refresh interval time
tREF
-
-
-
us
K4D261638F-TC50
Frequency
200MHz ( 5.0ns )
Cas Latency
3
tRC
12
tRFC
14
tRAS
8
tRCDRD
4
tRCDWR
2
tRP
4
tRRD
3
tDAL
7
Unit
tCK
K4D261638F-TC40
Frequency
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
3
3
tRC
13
12
tRFC
15
14
tRAS
9
8
tRCDRD
4
4
tRCDWR
2
2
tRP
4
4
tRRD
3
3
tDAL
7
7
Unit
tCK
tCK
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