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參數(shù)資料
| 型號(hào)： | K4D261638E-TC33 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| 中文描述： | 200萬(wàn)× 16 × 4，銀行雙數(shù)據(jù)速率同步DRAM |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大小： | 215K |
| 代理商： | K4D261638E-TC33 |
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128M DDR SDRAM
K4D261638E
- 9 -
Rev. 1.2 (Jul. 2003)
The extended mode register stores the data for enabling or disabling DLL and selecting output driver
strength. The default value of the extended mode register is not defined, therefore the extened mode register
must be written after power up for enabling or disabling DLL. The extended mode register is written by assert-
ing low on CS, RAS, CAS, WE and high on BA0(The DDR SDRAM should be in all bank precharge with CKE
already high prior to writing into the extended mode register). The state of address pins A0, A2 ~ A5, A7 ~ A11
and BA1 in the same cycle as CS, RAS, CAS and WE going low are written in the extended mode register. A1
and A6 are used for setting driver strength to normal, weak or matched impedance. Two clock cycles are
required to complete the write operation in the extended mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in
the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. All the other address
pins except A0,A1,A6 and BA0 must be set to low for proper EMRS operation. Refer to the table for specific
codes.
A
0
0
1
DLL Enable
Enable
Disable
BA
0
0
1
A
n
~ A
0
MRS
EMRS
EXTENDED MODE REGISTER SET(EMRS)
Address Bus
Extended
Mode Register
*1 : RFU(Reserved for future use) should stay "0" during EMRS cycle.
A
6
0
1
A
1
1
1
Output Driver Impedence Control
Weak
Matched
RFU
1
RFU
D.I.C
RFU
D.I.C
DLL
BA
1
BA
0
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D261638E-TC36 | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638E-TC40 | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638E-TC50 | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638 | 128Mbit GDDR SDRAM |
| K4D261638F | 128Mbit GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D261638E-TC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638E-TC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638E-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM |
| K4D261638F-LC40000 | 制造商:Samsung 功能描述:DDR SGRAM X16 TSOP2 - Trays |
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