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參數(shù)資料
| 型號： | K4C561638C-TCD4000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 32/42頁 |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCD4000 |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 32 -
Q0 Q1
RDA
LAL
DESL
RDA
MRS
DESL
or
WRA
0
2
3
4
5
6
7
8
9
10
11
1
I
RC
= 5 cycles
I
RCS
= 5 cycles
I
RCD
= 1 cycle
I
RAS
= 4 cycles
I
RCD
= 1 cycle
Hi-Z
Hi-Z
CL = 3
Hi-Z
Hi-Z
CK
CK
Command
Mode Register Set Timing (CL=3, BL=2)
DQS
(Output)
DQ
BA,UA
LA
Valid
(Op-Code)
X
A14 to A0
BA0, BA1
BA,UA
X
(Output)
Q0 Q1
RDA
LAL
DESL
X
or
WRA
0
2
3
4
5
6
7
n-1
n
n+1
n+2
1
I
PDA
= 1 cycles
I
RCD
= 1 cycle
t
IH
Hi-Z
Hi-Z
CL = 3
Hi-Z
Hi-Z
CK
CK
Command
Power Down Timing (CL=3, BL=2)
DQS
(Output)
DQ
A14 to A0
BA0, BA1
(Output)
DESL
IPD = 1 cycle
t
IS
t
QPDH
t
PDEX
Power Down Exit
Power Down Entry
～
～
～
～
Note :
"x" is don’t care.
IPD is defined from the first clock rising edage after PD is brought to "Low".
IPDA is defined from the first clock rising edage after PD is brought to "High".
PD must be kept "High" level until end of Burst data output.
PD should be brought to high within t
REFI(max)
to maintain the data written into cell.
～
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-AIF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
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