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參數(shù)資料
| 型號(hào)： | K4C561638C-TCD4000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 29/42頁 |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCD4000 |
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K4C5608/1638C 256Mb Network-DRAM
- 29 -
REV. 0.7 Aug. 2003
Da0 Da1
0
2
3
4
5
6
7
8
9
10
11
1
CK
CK
Multiple Bank Write Timing (CL = 3)
Da0 Da1
WL = 2
t
DQSS
WRAa
WRAb
I
RC
= 5 cycles
I
RBD
= 2 cycles
I
RAS
= 4 cycles
LALa
WRAb
LALb
DESL
WRAa
LALa
WRAc
LALc
WRAd
LALd
Bank"b"
X
Bank"a"
X
Bank"a"
X
Bank"c"
X
Bank"d"
X
Bank"b"
I
RBD
= 2 cycles
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RBD
= 2 cycles
I
RBD
= 2 cycles
t
DQSS
WL = 2
Db0 Db1
Dc0 Dc1
WL = 2
Da0 Da1
Db0 Db1
Da2 Da3
Db3
Db2
Da0 Da1
Dc0 Dc1
Da2 Da3
Dc2
Command
Bank Add.
(BA0, BA1)
BL = 2
DQS
(input)
DQ
DQS
(input)
BL = 4
DQ
(input)
(input)
WL = 2
t
DQSS
t
DQSS
t
DQSS
Da0 Da1
0
2
3
4
5
6
7
8
9
10
11
1
CK
CK
Multiple Bank Write Timing (CL = 4)
Da0 Da1
WL = 3
t
DQSS
WRAa
WRAb
I
RC
= 5 cycles
I
RBD
= 2 cycles
I
RAS
= 4 cycles
LALa
WRAb
LALb
DESL
WRAa
LALa
WRAc
LALc
WRAd
LALd
Bank"b"
X
Bank"a"
X
Bank"a"
X
Bank"c"
X
Bank"d"
X
Bank"b"
I
RBD
= 2 cycles
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RCD
= 1 cycle
I
RBD
= 2 cycles
I
RBD
= 2 cycles
t
DQSS
WL = 3
Db0 Db1
Dc0
WL = 3
Da0 Da1
Db0 Db1
Da2 Da3
Db3
Db2
Da0 Da1
Dc0
Da2 Da3
Command
Bank Add.
(BA0, BA1)
BL = 2
DQS
(input)
DQ
DQS
(input)
BL = 4
DQ
(input)
(input)
WL = 3
t
DQSS
t
DQSS
t
DQSS
Dc1
Dc1
Note :
means "H" or "L" "X" is don’t care I
RC
to the same bank must be satisfied.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C561638C-TCDA | 256Mb Network-DRAM |
| K4C89323AF-GCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCFB | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF5 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-AIF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
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