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參數(shù)資料
| 型號(hào)： | K4C561638C-TCD3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁數(shù)： | 22/42頁 |
| 文件大?。?/td> | 880K |
| 代理商： | K4C561638C-TCD3 |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 22 -
Function Truth Table (Continued)
Notes : 12. Illegal if any bank is not idle.
13. Illegal to bank in specified states : Function may be Legal in the bank indicated by bank Address (BA).
14. Illegal if t
FPDL
is not satisfied.
Current State
PD
CS
FN
Address
Command
Action
Notes
n-1
H
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
H
L
H
H
H
H
H
L
H
n
H
H
H
L
L
X
H
H
L
L
X
H
H
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
Idle
H
L
L
H
L
X
H
L
H
L
X
H
L
H
L
X
H
L
L
H
L
X
H
L
L
H
L
X
H
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
DESL
RDA
WRA
PDEN
-
-
LAL
MRS/EMRS
PDEN
REF (Self)
-
LAL
REF
PDEN
REF (Self)
-
DESL
RDA
WRA
PDEN
-
-
DESL
RDA
WRA
PDEN
-
-
DESL
NOP
Row activate for Read
Row activate for Write
Power Down Entry
Illegal
Refer to Power Down state
Begin read
Access to Mode Register
Illegal
Illegal
Invalid
Begin Write
Auto-Refresh
Illegal
Self-Refresh entry
Invalid
Continue burst read to end
Illegal
Illegal
Illegal
Illegal
Invalid
Data write & continue burst write to end
Illegal
Illegal
Illegal
Illegal
Invalid
NOP-> Idle after I
REFC
Illegal
Illegal
Self-Refresh entry
Illegal
Refer to Self-Refreshing state
Nop-> Idle after I
RSC
Illegal
Illegal
Illegal
Illegal
Invalid
Invalid
Maintain Power Down Mode
Exit Power Down Mode->Idle after t
PDEX
Illegal
Invalid
Maintain Self-Refresh
Exit Self-Refresh->Idle after I
REFC
Illegal
BA, UA
BA, UA
X
X
X
LA
Op-Code
X
X
X
LA
X
X
X
X
X
BA, UA
BA, UA
X
X
X
X
BA, UA
BA, UA
X
X
X
X
12
Row Active for Read
Row Active for Write
Read
13
13
Write
13
13
Auto-Refreshing
H
H
H
H
L
H
H
H
L
L
X
H
L
L
H
L
X
H
H
L
X
X
X
X
BA, UA
BA, UA
X
X
X
X
RDA
WRA
PDEN
-
-
DESL
Mode Register Accessing
H
H
H
H
L
H
L
L
H
H
L
L
X
X
L
H
L
L
H
L
X
X
X
H
H
L
X
X
X
X
X
X
BA, UA
BA, UA
X
X
X
X
X
X
RDA
WRA
PDEN
-
-
-
-
RDEX
14
Power Down
L
H
L
L
H
X
L
H
L
X
X
H
X
X
X
X
X
X
X
X
-
-
-
Se;f-Refreshing
SELFX
L
H
L
X
X
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C561638C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCDA | 256Mb Network-DRAM |
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| K4C89323AF-GCF6 | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C561638C-TCD4 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C89083AF-ACF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-ACF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
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