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參數(shù)資料
| 型號(hào)： | K4C560838C-TCD3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 40/42頁(yè) |
| 文件大?。?/td> | 880K |
| 代理商： | K4C560838C-TCD3 |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 40 -
Functional Description (Continued)
Regular Mode Register/Extended Mode Register change bits (BA0, BA1)
These bits are used to choose either Regular MRS or Extended MRS
Regular Mode Register Fields
(R-1) Burst Length field (A2 to A0)
This field specifies the data length for column access using the A2 to A0 pins and sets the Burst Length to be 2 or 4
words.
(R-2) Burst Type field (A3)
This Burst Type can be chosen Interleave mode or Sequential mode. When the A3 bit is " 0", Sequential mode is
selected. When the A3 bit is "1", Interleave mode is selected. Both burst types support burst length of 2 and 4 words.
Addressing sequence of Sequential mode (A3)
A column access is started from the inputted lower address and is performed by incrementing the lower address input to
the device. The address is varied by the Burst Length as the following.
CAS Latency = 2
BA1
0
0
1
BA0
0
1
X
A14 - A0
Regular MRS cycle
Extended MRS cycle
Reserved
A2
0
0
0
0
1
A1
0
0
1
1
X
A0
0
1
0
1
X
Burst Length
Reserved
2 words
4 words
Reserved
Reserved
A3
0
1
Burst Type
Sequential
Interleave
RDA
LAL
Data 0 Data 1 Data 2 Data 3
Addressing sequence for Sequential mode
Data
Data 0
Data 1
Data 2
Data 3
Access Address
n
n + 1
n + 2
n + 3
Burst Length
2 words (Address bits is LA0)
not carried from LA0 to LA1
4 words(Address bits is LA1, LA0)
not carried from LA0 to LA1
CK
CK
Command
DQS
DQ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C560838C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4C560838C-TCDA | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| K4C561638C-TCD3 | 256Mb Network-DRAM |
| K4C561638C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C560838C-TCD4 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C560838C-TCDA | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD3 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb Network-DRAM |
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