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參數(shù)資料
| 型號： | K4C560838C-TCD3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡內存 |
| 文件頁數(shù)： | 23/42頁 |
| 文件大小： | 880K |
| 代理商： | K4C560838C-TCD3 |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 23 -
Mode Register Table
Regular Mode Register
(Notes : 1)
Address
BA1
*1
BA0
*1
A14-A8
A7
*3
A6-A4
A3
A2-A0
Register
0
0
0
TM
CL
BT
BL
A7
Test Mode (TM)
0
Regular (Default)
1
Test Mode Entry
A3
Burst Type (BT)
0
Sequential
1
Interleave
A6
A5
A4
CAS Latency (CL)
0
0
X
Reserved
*2
0
1
0
Reserved
*2
0
1
1
3
1
0
0
4
1
0
1
Reserved
*2
1
1
X
Reserved
*2
A2
A1
A0
Burst Length (BL)
0
0
0
Reserved
*2
0
0
1
2
0
1
0
4
0
1
1
Reserved
*2
1
X
X
Extended Mode Register (Notes : 4)
Address
BA1
*4
BA0
*4
A14-A7
A6
A5-A2
A1
A0
Register
0
1
0
DIC
0
DIC
DS
A6
A1
Output Driver Impedance Control (DIC)
0
0
Normal Output Driver
0
1
Strong Output Driver
1
0
Weaker Output Driver
1
1
Weakest Output Driver
A0
DLL Switch (DS)
0
DLL Enable
1
DLL Disable
Note :
1. Regular Mode Register is Chosen Using the combination of BA0 = 0 and BA1 = 0.
2. "Reserved" places in Regular Mode Register should not be set.
3. A7 in Regular Mode Register must be set to "0"(Low state).
Because test Mode is specific mode for supplier.
4. Extended Mode Register is chosen using the Combination of BA0 = 1 and BA1 = 0.
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PDF描述 |
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| K4C560838C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4C560838C-TCDA | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| K4C561638C-TCD3 | 256Mb Network-DRAM |
| K4C561638C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| K4C561638C-TCD4000 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4C560838C-TCD4 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C560838C-TCDA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
| K4C561638C-TCD4000 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb Network-DRAM |
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