- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374254 > K4B1G1646C-ZCG9 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb C-die DDR3 SDRAM Specification PDF資料下載
參數(shù)資料
| 型號(hào)： | K4B1G1646C-ZCG9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb C-die DDR3 SDRAM Specification |
| 中文描述： | 1Gb的?芯片的DDR3 SDRAM規(guī)范 |
| 文件頁(yè)數(shù)： | 20/63頁(yè) |
| 文件大小： | 1255K |
| 代理商： | K4B1G1646C-ZCG9 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)當(dāng)前第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)
Page 20 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
[ Table 14 ] Single Ended AC and DC output levels
Note :
1. The swing of +/-0.1xVDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 34ohms and
an effective test load of 25ohms to VTT=VDDQ/2.
Symbol
Parameter
DDR3-800/1066/1333/1600
Units
Notes
V
OH(DC)
DC output high measurement level (for IV curve linearity)
0.8 x VDDQ
V
V
OM(DC)
DC output mid measurement level (for IV curve linearity)
0.5 x VDDQ
V
V
OL(DC)
DC output low measurement level (for IV curve linearity)
0.2 x VDDQ
V
V
OH(AC)
AC output high measurement level (for output SR)
VTT + 0.1 x VDDQ
V
1
V
OL(AC)
AC output low measurement level (for output SR)
VTT - 0.1 x VDDQ
V
1
[ Table 15 ] Differential AC and DC output levels
Note :
1. The swing of +/-0.2xVDDQ is based on approximately 50% of the static singel ended output high or low swing with a driver impedance of 34ohms and
an effective test load of 25ohms to VTT=VDDQ/2 at each of the differential outputs
Symbol
Parameter
DDR3-800/1066/1333/1600
Units
Notes
V
OHdiff(AC)
AC differential output high measurement level (for output SR)
+0.2 x VDDQ
V
1
V
OLdiff(DC)
AC differential output low measurement level (for output SR)
-0.2 x VDDQ
V
1
9.2 Differential AC and DC Output Levels
9.0 AC and DC Output Measurement Levels
9.1 Single Ended AC and DC Output Levels
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C560838C-TCD3 | 256Mb Network-DRAM |
| K4C560838C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4C560838C-TCDA | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| K4C561638C-TCD3 | 256Mb Network-DRAM |
| K4C561638C-TCD4 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4B1G1646D | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCF7 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCF8 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646D-HCH9 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification |
| K4B1G1646E | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Consumer Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。