參數(shù)資料
型號(hào): K4B1G0846C-ZCF7
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb C-die DDR3 SDRAM Specification
中文描述: 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù): 56/63頁(yè)
文件大?。?/td> 1255K
代理商: K4B1G0846C-ZCF7
Page 56 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
V
SS
CK
CK
Hold Slew Rate
Falling Signal
Hold Slew Rate
Rising Signal
Delta TR
Delta TF
V
REF(dc)
- Vil(dc)max
Delta TR
=
Vih(dc)min - V
REF(dc)
Delta TF
=
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF(dc)
V
IL(dc)
max
V
IL(ac)
max
nominal
slew rate
nominal
slew rate
dc to V
REF
region
dc to V
REF
region
Figure 22 - Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock).
tIS
tIH
tIS
tIH
dc to V
REF
region
Note :Clock and Strobe are drawn on a different time scale.
tDS
tDH
tDS
tDH
DQS
DQS
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