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參數(shù)資料
| 型號： | K4B1G0446C-CF8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb C-die DDR3 SDRAM Specification |
| 中文描述： | 1Gb的?芯片的DDR3 SDRAM規(guī)范 |
| 文件頁數(shù)： | 49/63頁 |
| 文件大?。?/td> | 1255K |
| 代理商： | K4B1G0446C-CF8 |
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Page 49 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
[ Table 51 ] Timing Parameters by Speed Bin (Cont.)
Speed
DDR3-800
DDR3-1066
DDR3-1333
Units
Note
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
Command and Address Timing
DLL locking time
t
DLLK
512
-
512
-
512
-
nCK
internal READ Command to PRECHARGE Command delay
t
RTP
max
(4t
CK
,7.5ns)
-
max
(4t
CK
,7.5ns)
-
max
(4t
CK
,7.5ns)
-
e
Delay from start of internal write transaction to internal read
command
t
WTR
max
(4t
CK
,7.5ns)
-
max
(4t
CK
,7.5ns)
-
max
(4t
CK
,7.5ns)
-
e,18
WRITE recovery time
t
WR
15
-
15
-
15
-
ns
e
Mode Register Set command cycle time
t
MRD
4
-
4
-
4
-
t
CK(avg)
Mode Register Set command update delay
t
MOD
max
(12t
CK
,15ns)
-
max
(12t
CK
,15ns)
-
max
(12t
CK
,15ns)
-
CAS# to CAS# command delay
t
CCD
4
-
4
-
4
-
nCK
Auto precharge write recovery + precharge time
t
DAL(min)
WR + roundup (t
RP
/ t
CK(AVG)
)
nCK
Multi-Purpose Register Recovery Time
t
MPRR
1
-
1
-
1
-
nCK
ACTIVE to PRECHARGE command period
t
RAS
37.5
70,000
37.5
70,000
36
70,000
ns
e
ACTIVE to ACTIVE command period for 1KB page size
t
RRD
max
(4t
CK
,10ns)
-
max
(4t
CK
,7.5ns)
-
max
(4t
CK
,6ns)
-
e
ACTIVE to ACTIVE command period for 2KB page size
t
RRD
max
(4t
CK
,10ns)
-
max
(4t
CK
,10ns)
-
max
(4t
CK
,7.5ns)
-
e
Four activate window for 1KB page size
t
FAW
40
-
37.5
-
30
-
ns
e
Four activate window for 2KB page size
t
FAW
50
-
50
-
45
-
ns
e
Command and Address setup time to CK, CK referenced to
Vih(ac) / Vil(ac) levels
t
IS(base)
200
-
125
-
65
-
ps
b,16
Command and Address hold time from CK, CK referenced to
Vih(ac) / Vil(ac) levels
t
IH(base)
275
-
200
-
140
-
ps
b,16
Refresh Timing
512Mb REFRESH to REFRESH OR REFRESH to ACTIVE
command interval
t
RFC
90
-
90
-
90
-
ns
1Gb REFRESH to REFRESH OR REFRESH to ACTIVE
command interval
t
RFC
110
-
110
-
110
-
ns
2Gb REFRESH to REFRESH OR REFRESH to ACTIVE
command interval
t
RFC
160
-
160
-
160
-
ns
4Gb REFRESH to REFRESH OR REFRESH to ACTIVE
command interval
t
RFC
300
-
300
-
300
-
ns
8Gb REFRESH to REFRESH OR REFRESH to ACTIVE
command interval
t
RFC
350
-
350
-
350
-
ns
Average periodic refresh interval (0
°
C
≤
TCASE
≤
85
°
C
)
t
REFI
7.8
7.8
7.8
us
Average periodic refresh interval (85
°
C
≤
TCASE
≤
95
°
C
)
t
REFI
3.9
3.9
3.9
us
Calibration Timing
Power-up and RESET calibration time
t
ZQinitI
512
-
512
-
512
-
t
CK
Normal operation Full calibration time
t
ZQoper
256
-
256
-
256
-
t
CK
Normal operation short calibration time
t
ZQCS
64
-
64
-
64
-
t
CK
23
Reset Timing
Exit Reset from CKE HIGH to a valid command
t
XPR
max(5t
, t
RFC
+ 10ns)
-
max(5t
, t
RFC
+ 10ns)
-
max(5t
, t
RFC
+ 10ns)
-
Self Refresh Timing
Exit Self Refresh to commands not requiring a locked DLL
t
XS
max(5t
,t
RFC
+ 10ns)
-
max(5t
,t
RFC
+ 10ns)
-
max(5t
,t
RFC
+ 10ns)
-
Exit Self Refresh to commands requiring a locked DLL
t
XSDLL
t
DLLK
(min)
-
t
DLLK
(min)
-
t
DLLK
(min)
-
t
CK
Minimum CKE low width for Self refresh entry to exit timing
t
CKESR
t
CKE
(min) +
1t
CK
-
t
CKE
(min) +
1t
CK
-
t
CKE
(min) +
1t
CK
-
Valid Clock Requirement after Self Refresh Entry (SRE)
t
CKSRE
max(5t
CK
,10ns)
-
max(5t
CK
,10ns)
-
max(5t
CK
,10ns)
-
Valid Clock Requirement before Self Refresh Exit (SRX)
t
CKSRX
max(5t
CK
,10ns)
-
max(5t
CK
,10ns)
-
max(5t
CK
,10ns)
-
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