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參數(shù)資料
| 型號(hào)： | K1S32161CC-FI70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位頁(yè)面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | K1S32161CC-FI70 |
Revision 0.0
July 2003
K1S32161CC
- 5 -
U
t
RAM
Preliminary
DC AND OPERATING CHARACTERISTICS
1. Typical values are tested at V
CC
=2.9V,
T
A
=25
°
C and not guaranteed.
Item
Symbol
Test Conditions
Min
Typ
1)
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH,
ZZ=V
IH
, OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS
≤
0.2V,
ZZ
≥
Vcc-0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
-
-
7
mA
I
CC2
Cycle time=t
RC
+3t
PC
, I
IO
=0mA, 100% duty, CS=V
IL
, ZZ=V
IH,
V
IN
=V
IL
or V
IH
-
40
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(CMOS)
I
SB1
2)
CS
≥
Vcc-0.2V, ZZ
≥
Vcc-0.2V, Other inputs=Vss to Vcc
-
-
100
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
2.9
3.1
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
PRODUCT LIST
Industrial Temperature Product(-40~85
°
C)
Part Name
Function
K1S32161CC-FI70
48-FBGA, 70ns, 2.9V
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