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參數(shù)資料
| 型號： | K1S1616B1A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 179K |
| 代理商： | K1S1616B1A |
Revision 0.0
October 2003
K1S1616B1A
- 5 -
U
t
RAM
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.8/2.0
2.1
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
1.4
-
V
CC
+0.3
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS1=V
IH
or CS2=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
-1
-
1
μ
A
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS1
≤
0.2V, LB
≤
0.2V
or/and UB
≤
0.2V, CS2
≥
V
CC
-
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-
0.2V
Cycle time=Min, I
IO
=0mA
,
100% duty,
CS1=V
IL,
CS2
=
V
IH
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
-
-
5
mA
I
CC2
-
-
25
mA
Output low voltage
V
OL
I
OL
= 0.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OH
= -0.1mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
Other inputs=0~Vcc
1) CS1
≥
V
CC
-0.2V
,
CS2
≥
V
CC
-
0.2V(CS1 controlled) or
2) 0V
≤
CS2
≤
0.2V(CS2 controlled)
-
-
80
μ
A
PRODUCT LIST
1. Lead Free Product
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K1S1616B1A-FI70
K1S1616B1A-FI85
K1S1616B1A-BI70
1)
K1S1616B1A-BI85
1)
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
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| K1S1616B1A-BI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
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| K1S1616B1A-BI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
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