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參數(shù)資料
| 型號(hào)： | K1S1616B1A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | K1S1616B1A |
Revision 0.0
October 2003
K1S1616B1A
- 10 -
U
t
RAM
Preliminary
C
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B/2
B
C
B
C
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
-
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.10
B1
#A1
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are
±
0.050 unless
specified beside figures.
4. Typ : Typical
5. Y is coplanarity: 0.10(Max)
Unit: millimeters
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S1616B1A-BI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-I | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616BCA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S1616B1A-BI70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-I | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
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