參數(shù)資料
型號(hào): K1N60SA
廠商: Fairchild Semiconductor Corporation
英文描述: TRIAC (Silicon Bidirectional Thyristor)
中文描述: 可控硅(硅雙向晶閘管)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 259K
代理商: K1N60SA
4
www.fairchildsemi.com
FKN1N60SA Rev. A
F
Typical Performance Characteristics
Figure 1. On-State Characteristics
Figure 2. Power Dissipation
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current
vs Junction Temperature
Figure5. Typical Gate Voltage
vs Junction Temperarure
Figure6. Typical Latching Currrent
vs Junction Temperature
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
T
J
=125
o
C
T
J
=25
o
C
V
TM
[V], On-State Voltage
I
T
[
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DC
180
o
120
o
90
o
60
o
30
o
P
A
[
IT
RMS
[A], On-State Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
70
80
90
100
110
120
DC
180
o
120
o
90
o
60
o
30
o
M
C
[
o
C
IT
RMS
[A], On-State Current
-40
0
40
80
120
0
1
2
3
4
5
6
Q3
Q1
I
G
[
T
J
[
o
C], Junction Temperature
Q2
-40
0
40
80
120
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Q3
Q1
V
G
[
T
J
[
o
C], Junction Temperature
Q2
-40
0
40
80
120
0
2
4
6
Q3
Q1
V
G
[
T
J
[
o
C], Junction Temperature
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