- 您現在的位置：買賣IC網 > PDF目錄374252 > K1B6416B6C (SAMSUNG SEMICONDUCTOR CO. LTD.) 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory PDF資料下載
參數資料
| 型號： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數： | 33/46頁 |
| 文件大?。?/td> | 768K |
| 代理商： | K1B6416B6C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當前第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
Revision 1.0
January 2005
K1B6416B6C
- 33 -
U
t
RAM
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
ADV
Address
CS
LB, UB
Data out
OE
CLK
DQ0
DQ1
DQ2
DQ3
Undefined
t
CD
Valid
Latency 5
t
HZ
Valid
t
ADVS
t
ADVH
t
AS(B)
t
AH(B)
t
CSS(B)
T
t
OH
Don’t Care
Fig.27 TIMING WAVEFORM OF BURST READ CYCLE(2)
[Latency=5,Burst Length=4,WP=Low enable]
(WE=V
IH
, MRS=V
IH
)
- CS Low Holding Consecutive Burst Read
SYNCHRONOUS BURST READ TIMING WAVEFORM
(SYNCHRONOUS BURST READ CYCLE - CS Low Holding Consecutive Burst Read)
1. The new burst operation can be issued only after the previous burst operation is finished. For the new burst operation, tBEADV
should be met.
2. /WAIT Low(tWL or tAWL) : Data not available(driven by CS low going edge or ADV low going edge)
/WAIT High(tWH) : Data available(driven by Latency-1 clock)
/WAIT High-Z(tWZ) : Data don’t care(driven by CS high going edge)
3. Multiple clock risings are allowed during low ADV period. The burst operation starts from the first clock rising.
4. The consecutive multiple burst read operation with holding CS low is possible through issuing only new ADV and address.
5. Burst Cycle Time(tBC) should not be over 2.5
μ
s.
WAIT
t
BLZ
t
BEL
t
OEL
t
OLZ
High-Z
0
t
WH
t
WL
t
AWL
t
WH
t
BEADV
t
BC
～
Table 31. BURST READ AC CHARACTERISTICS
(CS Low Holding Consecutive Burst)
Symbol
Speed
Units
Symbol
Speed
Units
Min
Max
Min
Max
t
BEL
t
OEL
t
BLZ
t
OLZ
t
HZ
1
1
5
5
-
-
-
-
-
clock
clock
ns
ns
ns
t
CD
t
OH
t
WL
t
AWL
t
WH
-
3
-
-
-
10
-
10
10
12
ns
ns
ns
ns
ns
12
相關PDF資料 |
PDF描述 |
|---|---|
| K1S161611A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S161611A-I | Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 8x5 mm; Packaging: Bulk |
| K1S16161CA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S16161CA-I | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K1BAAAAAAA | 制造商:OTTO Engineering Inc 功能描述:SCREW,RED ROCKERON-NONE-OFF,SPST,NO LIGHTS OR LEGENDS |
| K1BAAAAAAR | 制造商:OTTO Engineering Inc 功能描述:SRW/STD RED RKR,ON-NONE-OFF,SPST, NOLENS,NO LGHT,W/LEGND |
| K1BAAPCCFA | 制造商:OTTO Engineering Inc 功能描述:SPST RED ROCK, ON-OF12V GRN LED, 2 GRNLENS DEPENDENT |
| K1BABAAAAD | 制造商:OTTO Engineering Inc 功能描述:RockerSwitch Snap In 1-C NONE 2-C SPDT 制造商:OTTO Engineering Inc 功能描述:SCR STD TERMS,RED RKR,ON-NONE-ON-NO LIGHT |
| K1BABPCCFA | 制造商:OTTO Engineering Inc 功能描述:SPST RED ROCK, ON-ON12V GRN LED, 2 GRNLENS DEPENDENT |
發(fā)布緊急采購，3分鐘左右您將得到回復。