參數(shù)資料
型號: K1B6416B6C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
中文描述: 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機存取存儲器
文件頁數(shù): 3/46頁
文件大?。?/td> 768K
代理商: K1B6416B6C
Revision 1.0
January 2005
K1B6416B6C
- 3 -
U
t
RAM
Fig.1 PIN DESCRIPTION
Name
Function
Name
Function
CLK
Clock Input
I/O
0
~I/O
15
Data Inputs/Outputs
ADV
Address Input Valid
V
CC
/V
CCQ
Power Supply
MRS
Mode Register set
Vss/V
SSQ
Ground
CS
Chip Select
UB
Upper Byte(I/O
8
~
15
)
OE
Output Enable Input
LB
Lower Byte(I/O
0
~
7
)
WE
Write Enable Input
WAIT
Data Availability
A
0
~A
21
Address Inputs
NC
Not Connected
Table 2. PIN DESCRIPTION
54-FBGA: Top View(Ball Down)
LB
OE
A0
A1
A2
MRS
I/O8
UB
A3
A4
CS
I/O0
I/O9
I/O10
A5
A6
I/O1
I/O2
V
SSQ
I/O11
A17
A7
I/O3
Vcc
V
CCQ
I/O12
A21
A16
I/O4
Vss
I/O14
I/O13
A14
A15
I/O5
I/O6
I/O15
A19
A12
A13
WE
I/O7
A18
A8
A9
A10
A11
A20
1
2
3
4
5
6
A
B
C
D
E
F
G
H
WAIT
CLK
ADV
NC
NC
NC
J
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