參數(shù)資料
型號： JDH2S01T
元件分類： 射頻混頻器
英文描述： SILICON, UHF BAND, MIXER DIODE
封裝： TESC, 1-1H1A, 2 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 64K
代理商： JDH2S01T
JDH2S01T
2003-03-24
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01T
UHF Band Mixer
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
5
V
Forward current
IF
30
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 2 mA
0.25
V
Forward current
IF
VF = 0.5 V
30
mA
Reverse current
IR
VR = 0.5 V
25
mA
Capacitance
CT
VR = 0.2 V, f = 1 MHz
0.6
pF
Note: Signal level when capacitance is measured: Vsig
= 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1H1A
Weight: 0.0013 g (typ.)
相關(guān)PDF資料
PDF描述
JDH2S02FS SILICON, UHF BAND, MIXER DIODE
JDH3D01S SILICON, MIXER DIODE
JDH3D01S SILICON, MIXER DIODE
JDP2S01S SILICON, PIN DIODE
JDP2S02AS SILICON, PIN DIODE
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參數(shù)描述
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JDH2S03S 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Band Mixer
JDH3D01FV 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Diode Silicon Epitaxial Schottky Barrier Type For wave detection
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