參數(shù)資料
型號(hào)： JANTXV2N7237U
英文描述： -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
中文描述： - 200伏單P溝道高可靠性的貼片MOSFET的- 1封裝
文件頁(yè)數(shù)： 4/21頁(yè)
文件大?。?/td> 137K
代理商： JANTXV2N7237U
MIL-PRF-19500/368F
12
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical
measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements
shall be in accordance with the steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131
of MIL-STD-750. The following conditions shall apply:
a.
Collector current magnitude during power application shall be 150 mA dc for RθJC.
b.
Collector emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be +25
°C ≤ T
R ≤ +35°C. The chosen reference
temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case for RθJC.
Maximum limit shall be RθJC = 35°C/W.
* 4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Symbol
Unit
Method
Conditions
1
Collector-base cutoff
current
3036
Bias condition D,
VCB = 360 V dc for 2N3439, 2N3439L,
2N3439UA
VCB = 250 V dc for 2N3440, 2N3440L,
2N3440UA
ICB01
(1)
100 percent of initial
value or 200 nA dc,
whichever is greater.
2
Forward current
transfer ratio
3076
VCE = 10 V dc;
IC = 20 mA dc;
pulsed see 4.5.1
hFE1
(1)
±15 percent change
from initial reading.
(1) Devices which exceed the table I, group A limits for this test shall not be accepted.
相關(guān)PDF資料
PDF描述
JANTXV2N7334 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP
JANTXV2N7368 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254
JANTXV2N7369 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254
JANTXV2N7372 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA
JANTXV2N7373 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N7334 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 1A 14-Pin MO-036AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1A 14PIN MO-036AB - Bulk
JANTXV2N7335 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 0.75A 14-Pin MO-036AB 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 0.75A 14PIN MO-036AB - Bulk
JANTXV2N7336 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A/0.75A 14PIN MO-036AB - Bulk 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 100V 1A/0.75A 14-Pin MO-036AB 制造商:International Rectifier 功能描述:Dual N/P-Channel 100 V 1.4 W 15 nC Hexfet Power Mosfet Through Hole - MO-036AB
JANTXV2N7368 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-254 - Bulk
JANTXV2N7369 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 10A 3PIN TO-254 - Bulk
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