參數(shù)資料
型號(hào)： JANTXV1N5546DURTR
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 齊納二極管
英文描述： 33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
封裝： HERMETIC SEALED, GLASS, MLL34, MELF-2
文件頁(yè)數(shù)： 3/3頁(yè)
文件大?。?/td> 182K
代理商： JANTXV1N5546DURTR
Low Voltage Surface Mount
500 mW Avalanche Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2003
10-31-2003 REV B
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
1N5
518
BUR
–
1N5
546
BUR
GRAPHS and CIRCUIT
Noise density, (ND) is specified in
microvolt-rms per square-root-hertz.
Actual measurement is performed
using a 1 kHz to 3 kHz frequency
bandpass filter at a constant Zener test
current (IZT) at 25
oC ambient
temperature.
P
dRated
Po
wer
Dissipation
(m
W
)
FIGURE 1 Noise Density
Measurement Circuit
TEC
TA
TEC, End Cap Temperature (
oC) or TA
Ambient temperature on FR4 PC board
FIGURE 2 Power Derating Curve
T
ypical
Capacita
nce
in
Picofarads
(pf)
Zener Voltage VZ
FIGURE 4
FIGURE 3 Capacitance vs. Zener Voltage (Typical)
Zener Diode Characteristics and Symbol Identification
PACKAGE DIMENSIONS
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.063
0.067
1.60
1.70
B
0.130
0.146
3.30
3.70
C
0.016
0.022
0.41
0.55
PAD LAYOUT
INCHES
mm
A
.200
5.08
B
.055
1.40
C
.080
2.03
相關(guān)PDF資料
PDF描述
JAN1N5525CURTR 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
JAN1N5530BURTR 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
JAN1N5537CUR-1TR 17 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
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