參數(shù)資料
型號(hào): IXGM17N100
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: Low VCE(sat) IGBT, High speed IGBT
中文描述: 34 A, 1000 V, N-CHANNEL IGBT, TO-204AE
文件頁數(shù): 1/2頁
文件大?。?/td> 64K
代理商: IXGM17N100
1996 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 82
Clamped inductive load, L = 300
μ
H
34
17
68
A
A
A
I
= 34
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
150
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1000
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
17N100
17N100A
3.5
4.0
V
V
TO-247 AD (IXGH)
V
CES
1000 V
I
C25
34 A
34 A
V
CE(sat)
3.5 V
4.0 V
Low V
CE(sat)
IGBT
High speed IGBT
IXGH/IXGM
17
N100
IXGH/IXGM
17
N100A 1000 V
G
CE
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
International standard packages
l
2nd generation HDMOS
TM
process
l
Low V
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Voltage rating guaranteed at high
temperature (125
°
C)
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
91515E (3/96)
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