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參數(shù)資料
| 型號： | ISL9R8120P2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8A, 1200V Stealth⑩ Diode |
| 中文描述： | 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | TO-220AC, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | ISL9R8120P2 |
2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A
I
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-220, TO-263
Device Marking
R8120P2
R8120S3S
Device
Package
TO-220AC
TO-263AB
Tape Width
N/A
24mm
Quantity
50
800
ISL9R8120P2
ISL9R8120S3S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 1200V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1.0
μA
mA
I
F
= 8A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
2.8
2.7
3.3
3.1
V
V
V
R
= 10V, I
F
= 0A
-
30
-
pF
I
F
= 1A, dI
F
/dt = 100A/μs, V
R
= 30V
I
F
= 8A, dI
F
/dt = 100A/μs, V
R
= 30V
I
F
= 8A,
dI
F
/dt = 200A/μs,
V
R
= 780V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
35
300
4.3
525
375
9
5.5
1.1
200
5.5
11
1.2
310
32
44
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
μC
ns
-
A
μC
A/μs
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
I
F
= 8A,
dI
F
/dt = 200A/μs,
V
R
= 780V,
T
C
= 125
°
C
I
F
= 8A,
dI
F
/dt = 1000A/μs,
V
R
= 780V,
T
C
= 125
°
C
TO-220, TO-263
-
-
-
-
1.75
62
°
C/W
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL9R8120S3S | 8A, 1200V Stealth⑩ Diode |
| ISL9V2040D3S | EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT |
| ISL9V2040P3 | EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT |
| ISL9V2040S3S | EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT |
| ISL9V2540S3S | EcoSPARK N-Channel Ignition IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9R8120P2 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bridge Rectifier 制造商:Fairchild Semiconductor Corporation 功能描述:FAST DIODE, 8A, 1.2KV, TO-220AC |
| ISL9R8120P2 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE FAST 8A 1200V TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE, FAST, 8A, 1200V, TO-220 |
| ISL9R8120P2_Q | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R8120S3ST | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R8120S3ST_Q | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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